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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION *High Switching Speed *High Voltage *Built-in Integrated Diode APPLICATIONS *Designed for use in horizontal deflection circuits in TV's and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature VALUE 1500 700 10 6 12 3 5 44 150 -65~150 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUH315D TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V IEBO Emitter Cutoff Current VEB= 5V; IC=0 300 mA ICES Collector Cutoff Current VCE= 1500V;VBE= 0 IC= 3A ; VCE= 5V IC= 3A ; VCE= 5V;TC=100 IF= 3A 4 2.5 0.2 9 mA hFE DC Current Gain VECF C-E Diode Forward Voltage 2.5 V Switching Times; Resistive Load ts Storage Time IC= 3A;IB1= 1A; IB2= -1.5A VCC= 400V 1.8 2.7 s tf Fall Time 0.2 0.3 s isc Websitewww.iscsemi.cn |
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